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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/11398

Title: Electrode Design Optimization of a CMOS Fringing-Field Capacitive Sensor
Authors: Li, Yu-Ting;Tzeng, Yen-Lin;Chao, Chih-Ming;Wang, Kerwin
Contributors: 機電工程學系
Keywords: Fringing field;Capacitance;Mesh-electrode
Date: 2012-03
Issue Date: 2012-06-06T01:44:10Z
Publisher: IEEE
Abstract: The capacitance of a micro-capacitive-sensor is mainly depends on its electrode structures, electrode arrangement and the dielectric strength of its surrounding. This paper presents a novel electrode design to enhance the fringingfield and to increase the capacitance of a CMOS MEMS
capacitive sensor. The design optimization process is assisted by COMSOL, a multi-physics finite-element simulation tool. The design goal is to maximize the fringing-field of capacitive sensor. The capacitor has been built with a VLSI Schmitt trigger, and temperature compensator to probe the capacitance. The experiment results show that proposed capacitor can achieve the capacitance to 75.2 pF.
Relation: The 7th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS), Kyoto, Japan, March 5-8, 2012
Appears in Collections:[機電工程學系] 會議論文

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