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|Title: ||Electrode Design Optimization of a CMOS Fringing-Field Capacitive Sensor|
|Authors: ||Li, Yu-Ting;Tzeng, Yen-Lin;Chao, Chih-Ming;Wang, Kerwin|
|Keywords: ||Fringing field;Capacitance;Mesh-electrode|
|Issue Date: ||2012-06-06T01:44:10Z
|Abstract: ||The capacitance of a micro-capacitive-sensor is mainly depends on its electrode structures, electrode arrangement and the dielectric strength of its surrounding. This paper presents a novel electrode design to enhance the fringingfield and to increase the capacitance of a CMOS MEMS|
capacitive sensor. The design optimization process is assisted by COMSOL, a multi-physics finite-element simulation tool. The design goal is to maximize the fringing-field of capacitive sensor. The capacitor has been built with a VLSI Schmitt trigger, and temperature compensator to probe the capacitance. The experiment results show that proposed capacitor can achieve the capacitance to 75.2 pF.
|Relation: ||The 7th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS), Kyoto, Japan, March 5-8, 2012|
|Appears in Collections:||[機電工程學系] 會議論文|
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