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NCUEIR > College of Engineering > Department of Mechatronics Engineering > Proceedings > Item 987654321/11398

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/11398

Title:	Electrode Design Optimization of a CMOS Fringing-Field Capacitive Sensor
Authors:	Li, Yu-Ting;Tzeng, Yen-Lin;Chao, Chih-Ming;Wang, Kerwin
Contributors:	機電工程學系
Keywords:	Fringing field;Capacitance;Mesh-electrode
Date:	2012-03
Issue Date:	2012-06-06T01:44:10Z
Publisher:	IEEE
Abstract:	The capacitance of a micro-capacitive-sensor is mainly depends on its electrode structures, electrode arrangement and the dielectric strength of its surrounding. This paper presents a novel electrode design to enhance the fringingfield and to increase the capacitance of a CMOS MEMS capacitive sensor. The design optimization process is assisted by COMSOL, a multi-physics finite-element simulation tool. The design goal is to maximize the fringing-field of capacitive sensor. The capacitor has been built with a VLSI Schmitt trigger, and temperature compensator to probe the capacitance. The experiment results show that proposed capacitor can achieve the capacitance to 75.2 pF.
Relation:	The 7th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS), Kyoto, Japan, March 5-8, 2012
Appears in Collections:	[Department of Mechatronics Engineering] Proceedings

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