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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/11675

Title: Power Amplifier for 77-GHz Automotive Radar in 90-nm LP CMOS Technology
Authors: Lin, Jau-Jr;To, Kun-Hin;Hammock, Donna;Knappenberger, Bill;Majerus, Michael;Huang, W. Margaret
Contributors: 電機工程學系
Keywords: CMOS;Millimeter-wave;Power amplifier;RADAR
Date: 2010-05
Issue Date: 2012-06-18T02:37:10Z
Publisher: Institute of Electrical and Electronics Engineers
Abstract: This letter reports power amplifiers for 77-GHz automotive radar applications in a 90-nm LP (lowpower) 1P6MCMOS technology. The three-stage single-ended PA has a 12.4 dB gain and a+9.1- dBm saturated output power and the two-stage differential PA has a 11.3 dB gain and a+11.4-dBm output power at Pin=1.9 dBm. This is the first letter to report CMOS PA characteristics over full automotive temperature range ( -40∘c to 125∘c ) at 77 GHz range.
Relation: IEEE Microwave and Wireless Components Letters, 20(5): 292-294
Appears in Collections:[電機工程學系] 期刊論文

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