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Please use this identifier to cite or link to this item:
http://ir.ncue.edu.tw/ir/handle/987654321/11683
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| Title: | Wideband PA and LAN for 60-GHz Radio in 90-nm LP CMOS Technology |
| Authors: | Lin, Jau-Jr;To, Kun-Hin;Brown, Bill;Hammock, Donna;Majerus, Michael;Tutt, Marcel;Huang, W. Margaret |
| Contributors: | 電機工程學系 |
| Keywords: | CMOS;IEEE 802.15;Lna and pa;WPAN |
| Date: | 2008-10
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| Issue Date: | 2012-06-18T02:37:48Z
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| Abstract: | This paper reports a LNA and a PA for IEEE802.15 WAPN application in a 90-nm LP (low power) 1P6M CMOS technology. The LNA has a 13-dB peak gain and a 7-dB NF and the PA has a 9.8-dB gain and a +11.2-dBm saturated output power. Both LNA and PA have achieved input and output matching bandwidths exceeding 10GHz, while the reflection coefficient (|S 11|, |S 22) < -l0dB. The design was targeted that |S 21| variation within 2dB from the peak over the frequencies and the measured 2-dB bandwidth of both LNA and PA are also exceeding 14GHz. Both LAN and PA should be able to accommodate 9-GHz bandwidth requirement of IEEE802.15 WPAN application. A high performance PA and LNA are achieved with this backend process. |
| Relation: | 2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, 2008, Monterey, CA, October 12-15, 2008: 131-134 |
| Appears in Collections: | [電機工程學系] 會議論文
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