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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/11683

Title: Wideband PA and LAN for 60-GHz Radio in 90-nm LP CMOS Technology
Authors: Lin, Jau-Jr;To, Kun-Hin;Brown, Bill;Hammock, Donna;Majerus, Michael;Tutt, Marcel;Huang, W. Margaret
Contributors: 電機工程學系
Keywords: CMOS;IEEE 802.15;Lna and pa;WPAN
Date: 2008-10
Issue Date: 2012-06-18T02:37:48Z
Abstract: This paper reports a LNA and a PA for IEEE802.15 WAPN application in a 90-nm LP (low power) 1P6M CMOS technology. The LNA has a 13-dB peak gain and a 7-dB NF and the PA has a 9.8-dB gain and a +11.2-dBm saturated output power. Both LNA and PA have achieved input and output matching bandwidths exceeding 10GHz, while the reflection coefficient (|S 11|, |S 22) < -l0dB. The design was targeted that |S 21| variation within 2dB from the peak over the frequencies and the measured 2-dB bandwidth of both LNA and PA are also exceeding 14GHz. Both LAN and PA should be able to accommodate 9-GHz bandwidth requirement of IEEE802.15 WPAN application. A high performance PA and LNA are achieved with this backend process.
Relation: 2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, 2008, Monterey, CA, October 12-15, 2008: 131-134
Appears in Collections:[電機工程學系] 會議論文

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