National Changhua University of Education Institutional Repository : Item 987654321/11914

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NCUEIR > College of Engineering > Department and Graduate Institute of Electronic Engineering > Periodical Articles > Item 987654321/11914

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/11914

Title:	Etched-coupled cavity InGaAsP/InP lasers
Authors:	Chen, Kuo-Liang;Wang, Shyh
Contributors:	電機工程系
Date:	1985-01
Issue Date:	2012-07-03T01:34:52Z
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Abstract:	A new structure for coupled-cavity lasers operating at 1-25 /im wavelength is presented. Using chemical etching, we made a three-cavity laser from an index-guided channelledsubstrate Fabry-Perot laser. It oscillates in a single longitudinal mode with a side-mode suppression ratio of 200:1 in the pumping current range of 120 mA to 220 mA. The same mode was maintained at a fixed current of 160 mA as the heat-sink temperature was varied from 9�C to 45�C. The advantages of this laser over other coupled-cavity lasers are the simplicity of fabrication, the accuracy of cavity length control, and the possibility of incorporating short-etalon sections in the coupled cavities.
Relation:	Electronics Letters, 21(3): 94-95
Appears in Collections:	[Department and Graduate Institute of Electronic Engineering] Periodical Articles

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