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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12271

Title: Fabrication and analysis of ZnO thin film bulk acoustic resonators
Authors: Lin, Yi- Cheng;Hong, C. R.;Chuang, H. A.
Contributors: 機電工程系
Keywords: RF magnetron sputter;ZnO;Film bulk acoustic resonator
Date: 2008
Issue Date: 2012-07-05T07:10:30Z
Publisher: Elsevier B.V.
Abstract: This study employs RF magnetron sputter technique to deposit high C-axis preferred orientation ZnO thin film on silicon substrate, which is
then used as the piezoelectric thin film for a thin film bulk acoustic resonator (FBAR). Electrical properties of the FBAR component were
investigated by sputtering a ZnO thin film on various bottom electrode materials, as well as varying sputter power, sputter pressure, substrate
temperature, argon and oxygen flow rate ratio, so that structural parameters of each layer were changed. The experimental results show that when
sputter power is 200 W, sputter pressure is 10 mTorr, substrate temperature is 300 8C, and argon to oxygen ratio is 4:6, the ZnO thin film has high Caxis preferred orientation. The FBAR component made in this experiment show that different bottom electrode materials have great impact on
components. In the experiment, the Pt bottom electrode resonant frequency was clearly lower than the Mo bottom electrode resonant frequency,
because Pt has higher mass density and lower acoustic wave rate. The component resonant frequency will decrease as ZnO thin film thickness
increases; when top electrode thickness is higher, its resonant frequency also drops, due to top electrode mass loading effect and increased acoustic wave path. Therefore, ZnO thin film and top/bottom electrode thickness can be fine-tuned according to the required resonant frequency.
Relation: Applied Surface Science, 254(13): 3780-3786
Appears in Collections:[機電工程學系] 期刊論文

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