資料載入中.....
|
請使用永久網址來引用或連結此文件:
http://ir.ncue.edu.tw/ir/handle/987654321/12273
|
題名: | Low temperature ITO thin film deposition on PES substrate using pulse magnetron sputtering |
作者: | Lin, Yi- Cheng;Li, J. Y.;Yen, W. T. |
貢獻者: | 機電工程系 |
關鍵詞: | Pulse magnetron sputter;ITO;PES plastic substrate;Duty cycle |
日期: | 2008-03
|
上傳時間: | 2012-07-05T07:10:35Z
|
出版者: | Elsevier B.V. |
摘要: | Experiments were conducted using pulse magnetron sputtering (PMS) to deposit transparent conducting indium tin oxide (ITO) thin film onto flexible polyethersulfone (PES) plastic substrates. The thin film microstructure, optoelectronic and residual stress were analyzed using the modulating PMS power, work pressure, pulse frequency, duty cycle and cycle time process parameters. The residual stress of the thin film was determined by scanning electron microscopy (SEM) combined with the Sony equation. The experimental results show that PMS has a lower process temperature, higher deposition rate and lower resistivity compared with the radio frequency process at the same output power. The duty cycle increase produces the optimum optoelectronic characteristics. When the pressure, power, duty cycle and sputter time are increased, the thin film stress will also increase, causing flexural distortion in the PES plastic substrate. When the deposition thickness reaches 1.5 μm, ITO thin film will appear with a distinct split. Under 5 mtorr work pressure, 60 W power, 33 μs duty time and 2 μs pulse reverse time at duty cycle 95%, thin film with an optimized electrical 3.0 × 10−4 Ω-cm, RMS surface roughness of 0.85 nm and visible region optical transmittance will be achieved with acquisition of over 85%. |
關聯: | Applied Surface Science, 254(11): 3262-3268 |
顯示於類別: | [機電工程學系] 期刊論文
|
文件中的檔案:
檔案 |
大小 | 格式 | 瀏覽次數 |
index.html | 0Kb | HTML | 698 | 檢視/開啟 |
|
在NCUEIR中所有的資料項目都受到原著作權保護.
|