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| 題名: | Effect of Cr and V dopants on the chemical stability of AZO thin film |
| 作者: | Lin, Yi-Cheng;Jiang, J. H.;Yen, W. T. |
| 貢獻者: | 機電工程系 |
| 關鍵詞: | Pulsed DC magnetron sputtering;AZO;Chemical stability;Doping;Transparent conducting oxide |
| 日期: | 2009-02
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| 上傳時間: | 2012-07-05T07:10:39Z
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| 出版者: | Elsevier B.V. |
| 摘要: | The effect of the dopants of Cr and V on the optoelectronic properties of AZO thin film by pulsed DC magnetron sputtering has been investigated.We also use HCl and KOH solutions to conduct the chemical stability of AZO:Cr:V thin film. The experimental results show that the optimum AZO optoelectronic properties without Cr and V doping obtain the resistivity of 9.87 10 4 V cm, optical transmittance of 84% and surface roughness rms value of 2.6 nm. The chemical stability of AZO will increase after Cr and V doping. Under the added V = 0.19 wt.%, Cr = 0.56 wt.%, AZO:Cr:V thin film showed 52% increased chemical stability and 128% decrease in surface roughness after etching (the resistivity was
3.62 10 3 Vcm and optical transmittance 81%). From the experimental results, the higher resistivity obtained after KOH etching compared with after HCl etching. The reason is that the Zn/Al ratio will reduce after etching and cause the AZO film carrier density to reduce as well. However, the optical transmittance obtained after KOH etching will be higher than that after HCl etching. This is because that a better surface roughness after KOH etching obtained than after HCl etching. |
| 關聯: | Applied Surface Science, 255: 3629-3634 |
| 顯示於類別: | [機電工程學系] 期刊論文
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