National Changhua University of Education Institutional Repository : Item 987654321/12278
English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 6498/11670
造訪人次 : 27767498      線上人數 : 269
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 進階搜尋


題名: A study on the bonding conditions and mechanism for glass-to-glass anodic bonding in field emission display
作者: Yen, Wen-Tsai;Lin, Yi- Cheng
貢獻者: 機電工程系
關鍵詞: Anodic bonding;Field emission display;Glass-to-glass;Spacer;Sputtering
日期: 2009-09
上傳時間: 2012-07-05T07:10:44Z
出版者: VSP, an imprint of Brill
摘要: Here we have investigated the bonding conditions and mechanism for glass-to-glass anodic bonding in indium-tin-oxide (ITO)-coated glass using an Al/Cr composite thin film as an interlayer prepared by RF magnetron sputtering. The experimental results show that the bond strength increases with increasing the bonding temperature, bonding voltage, and Al film thickness. The optimum experimental parameters in the anodic bonding were found to be an Al film thickness of 300 nm, bonding temperature of 300°C, and bonding voltage of 700 V. Oxygen content within the bonded interphase increases and aluminum content decreases on increasing both the temperature and voltage during the bonding process. According to EDS analysis results, the main bond mechanism is proposed to be due to the following chemical reactions: 4Na+ + 4e- → 4Na, xAl + yO2- → Al x O y + 6e-, x = 2, y = 3.
關聯: Journal of Adhesion Science and Technology, 23(1): 151-162
顯示於類別:[機電工程學系] 期刊論文


檔案 大小格式瀏覽次數
2050100210005.pdf90KbAdobe PDF615檢視/開啟



DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回饋