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题名: Growth characteristics and properties of ZnO:Ga thin films prepared by pulsed DC magnetron sputtering
作者: Yen, W. T.;Lin, Yi- Cheng;Yao, P. C.;Ke, J. H.;Chen, Y. L.
贡献者: 機電工程系
关键词: ZnO:Ga;Optoelectronic properties;Pulse frequency;Pulsed DC magnetron sputter
日期: 2010-03
上传时间: 2012-07-05T07:11:00Z
出版者: Elsevier B.V.
摘要: Transparent conductive ZnO:Ga thin films were deposited on Corning 1737 glass substrate by pulsed direct current (DC) magnetron sputtering. The effects of process parameters, namely pulse frequency and film thickness on the structural and optoelectronic properties of ZnO:Ga thin films are evaluated. It shows that highly c-axis (0 0 2) oriented polycrystalline films with good visible transparency and electrical conductivity were prepared at a pulsed frequency of 10 kHz. Increasing the film thickness also enlarged the grain size and carrier mobility which will subsequently lead to the decrease in resistivity. In summary, ZnO:Ga thin film with the lowest electrical resistivity of 2.01 × 10−4 Ω cm was obtained at a pulse frequency of 10 kHz with 500 nm in thickness. The surface RMS (root mean square) roughness of the film is 2.9 nm with visible transmittance around 86% and optical band gap of 3.83 eV.
關聯: Applied Surface Science, 256(11): 3432-3437
显示于类别:[機電工程學系] 期刊論文


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