English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6486/11658
Visitors : 23428694      Online Users : 236
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12281

Title: Effect of post-annealing on the optoelectronic properties of ZnO:Ga films prepared by pulsed direct current magnetronsputtering
Authors: Wen-Tsai Yen;Yi-Cheng Lin;Pin-Chuan Yao;Jia-Hong Ke;Yung-Lin Chen
Contributors: 機電工程系
Keywords: ZnO:Ga;Annealing;Pulsed direct current magnetron sputtering;Optoelectronic properties;Near-infrared reflective
Date: 2010-04
Issue Date: 2012-07-05T07:11:02Z
Publisher: Elsevier B.V.
Abstract: In this study, highly conductive films of ZnO:Ga (GZO) were deposited by pulsed direct current magnetron sputtering to explore the effect of post-annealing on the structural, electrical and optical properties of the films. XRD patterns showed that after annealing, the intensity of c-axis preferentially oriented GZO (002) peak was apparently improved. GZO film annealing at 300 °C for 0.5 h exhibits lowest resistivity of 1.36×10−4Ωcm. In addition, the film shows good optical transmittance of 88% with optical band gap, 3.82 eV. Carrier concentration and optical band gap both decreaseswith the annealing temperature. Besides, the near-infrared transmittance at 1400 nm is below 5%, while the reflectivity at 2400 nm is as high as 70%.
Relation: Thin Solid Films, 518: 3882-3885
Appears in Collections:[機電工程學系] 期刊論文

Files in This Item:

File SizeFormat
index.html0KbHTML562View/Open


All items in NCUEIR are protected by copyright, with all rights reserved.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback