National Changhua University of Education Institutional Repository : Item 987654321/12281
English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 6491/11663
造訪人次 : 24520651      線上人數 : 68
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 進階搜尋

請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/12281

題名: Effect of post-annealing on the optoelectronic properties of ZnO:Ga films prepared by pulsed direct current magnetronsputtering
作者: Wen-Tsai Yen;Yi-Cheng Lin;Pin-Chuan Yao;Jia-Hong Ke;Yung-Lin Chen
貢獻者: 機電工程系
關鍵詞: ZnO:Ga;Annealing;Pulsed direct current magnetron sputtering;Optoelectronic properties;Near-infrared reflective
日期: 2010-04
上傳時間: 2012-07-05T07:11:02Z
出版者: Elsevier B.V.
摘要: In this study, highly conductive films of ZnO:Ga (GZO) were deposited by pulsed direct current magnetron sputtering to explore the effect of post-annealing on the structural, electrical and optical properties of the films. XRD patterns showed that after annealing, the intensity of c-axis preferentially oriented GZO (002) peak was apparently improved. GZO film annealing at 300 °C for 0.5 h exhibits lowest resistivity of 1.36×10−4Ωcm. In addition, the film shows good optical transmittance of 88% with optical band gap, 3.82 eV. Carrier concentration and optical band gap both decreaseswith the annealing temperature. Besides, the near-infrared transmittance at 1400 nm is below 5%, while the reflectivity at 2400 nm is as high as 70%.
關聯: Thin Solid Films, 518: 3882-3885
顯示於類別:[機電工程學系] 期刊論文

文件中的檔案:

檔案 大小格式瀏覽次數
index.html0KbHTML598檢視/開啟


在NCUEIR中所有的資料項目都受到原著作權保護.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回饋