Loading...
|
Please use this identifier to cite or link to this item:
http://ir.ncue.edu.tw/ir/handle/987654321/12282
|
| Title: | Effect of process conditions on the optoelectronic characteristics of ZnO:Mo thin films prepared by pulsed direct current magnetron sputtering |
| Authors: | Lin, Yi- Cheng;Wang, B. L.;Yen, W. T.;Ha, C. T.;Peng, Chris |
| Contributors: | 機電工程系 |
| Keywords: | Transparent conducting oxide;Mo-doped ZnO (ZnO:Mo);Thin film;Pulsed direct current magnetron sputtering |
| Date: | 2010-06
|
| Issue Date: | 2012-07-05T07:11:04Z
|
| Publisher: | Elsevier B.V. |
| Abstract: | The purpose of this study is to use pulsed magnetron sputtering to deposit transparent conductive ZnO:Mo (MZO) film on a Corning 1737 glass substrate. Various process parameters, including power, work pressure, pulsed frequency, film thickness, and substrate temperature, were analyzed for their effects on the microstructure and optoelectronic characteristics of MZO thin film. Experimental results show that MZO film with a low resistivity of approximately 8.9×10−4 Ω cm and a visible light transitivity of greater than 80% can be obtained using a Mo content of 1.77 wt.%, sputtering power of 100 W, work pressure of 0.4 Pa, pulsed frequency of 10 kHz, and film thickness of 500 nm without heating. The value of optical band gap of MZO increased upon increasing the crystallinity of the MZO thin film, and the range of the optical band gap of MZO thin film is from 3.30 to 3.35 eV. |
| Relation: | Thin Solid Films, 518(17): 4928-4934 |
| Appears in Collections: | [機電工程學系] 期刊論文
|
Files in This Item:
| File |
Size | Format | |
|---|
| index.html | 0Kb | HTML | 517 | View/Open |
|
All items in NCUEIR are protected by copyright, with all rights reserved.
|
