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題名: The characteristics of chemical and heat stability properties of chromium-vanadium-aluminum co-doped zinc oxide films for dye-sensitized solar cells
作者: Lin, Yi- Cheng;Chang, C. H.;Shen, C. H.;Wang, P. W.;Lee, Y. C.
貢獻者: 機電工程系
關鍵詞: AZO:Cr:V;Doped zinc oxide;Chemical stability;Heat stability;Dye-sensitized solar cells;Front contact
日期: 2010-08
上傳時間: 2012-07-05T07:11:06Z
出版者: Elsevier B.V.
摘要: Transparent conducting oxide thin films are used as front contact material for dye-sensitized solar cells. This study investigated the effects of chromium (Cr) and vanadium (V) contents on the chemical and heat stability properties of aluminum-doped zinc oxide (AZO) thin films using pulsed direct current magnetic sputtering on Corning 1737F glass substrates. The experimental results show that Cr and V doping is useful for improving the chemical and thermal stability of AZO films. The energy gap for AZO thin films is between 3.65 and 3.69 eV. The resistivity of the AZO:Cr:V thin film was 4.23 × 10–4 Ω cm at a Cr/V ratio of 0.30/0.23 wt.%, deposition power of 150 W, working distance of 5.5 cm, substrate temperature of 473 K, working pressure of 0.4 Pa, and frequency of 10 kHz. This value is lesser than (and therefore superior to) the resistivity of SnO2:F (FTO) films (6.5 × 10–4 Ω cm), but greater than that of SnO2:In (ITO) thin films (1.2 × 10–4 Ω cm). The resistivity increased by about 0.27% after electrolyte etching, which is similar to the 0.16% increase observed for the ITO thin film. After a thermal cycle test at 673 K, the resistivity of the AZO:Cr:V film increased to 5.42 × 10–4 Ω cm, which is better than the resistivity of the ITO and FTO films after the same thermal cycle.
關聯: Thin Solid Films, 518(21): 5881-6142
顯示於類別:[機電工程學系] 期刊論文

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