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題名: Surface textured ZnO:Al thin films by pulsed DC magnetron sputtering for thin film solar cells applications
作者: Yen, W. T.;Lin, Yi- Cheng;Ke, J. H.
貢獻者: 機電工程系
關鍵詞: Al-doped ZnO;Surface textured;Light-trapping structure;Haze value;Pulsed DC magnetron sputtering
日期: 2010-11
上傳時間: 2012-07-05T07:11:09Z
出版者: Elsevier B.V.
摘要: Transparent conducting thin films of ZnO:Al (Al-doped ZnO, AZO) were prepared via pulsed DC magnetron sputtering with good transparency and relatively lower resistivity. The AZO films with 800 nm in thickness were deposited on soda-lime glass substrates keeping at 473 K under 0.4 Pa working pressure, 150 W power, 100 μs duty time, 5 μs pulse reverse time, 10 kHz pulse frequency and 95% duty cycle. The as-deposited AZO thin films has resistivity of 6.39 × 10−4 Ω cm measured at room temperature with average visible optical transmittance, Ttotal of 81.9% under which the carrier concentration and mobility were 1.95 × 1021 cm−3 and 5.02 cm2 V−1 s−1, respectively. The films were further etched in different aqueous solutions, 0.5% HCl, 5% oxalic acid, 33% KOH, to conform light scattering properties. The resultant films etched in 0.5% HCl solution for 30 s exhibited high Ttotal = 78.4% with haze value, HT = 0.1 and good electrical properties, ρ = 8.5 × 10−4 Ω cm while those etched in 5% oxalic acid for 150 s had desirable HT = 0.2 and relatively low electrical resistivity, ρ = 7.9 × 10−4 Ω cm. However, the visible transmittance, Ttotal was declined to 72.1%.
關聯: Applied Surface Science, 257(3): 960-968
顯示於類別:[機電工程學系] 期刊論文


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