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NCUEIR > College of Engineering > Department of Mechatronics Engineering > Periodical Articles > Item 987654321/12287

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12287

Title:	Influence of annealing temperature on properties of Cu(In,Ga)(Se,S)2 thin films prepared by co-sputtering from quaternary alloy and In2S3 targets
Authors:	Lin, Yi- Cheng;Yen, W. T.;Chen, Y. L.;Wanga, L. Q.;Jih, F. W.
Contributors:	機電工程系
Keywords:	Chalcopyrite;Cu(In,Ga)(Se,S)2;Quaternary target;Co-sputtering
Date:	2011-02
Issue Date:	2012-07-05T07:11:20Z
Publisher:	Elsevier B.V.
Abstract:	Pentanary Cu(In,Ga)(Se,S)2 (CIGSS) thin films were deposited on soda-lime glass substrate by co-sputtering quaternary alloy, and In2S3 targets. In this study, we investigated the influence of post-annealing temperature on structural, compositional, electrical, and optical properties of CIGSS films. Our experimental results show that the CIGS quaternary target had chalcopyrite characteristics. All CIGSS films annealed above 733 K exhibited a polycrystalline tetragonal chalcopyrite structure, with (1 1 2) preferred orientation. The carrier concentration and resistivity of the resultant CIGSS layer annealed above 763 K was 4.86×1016 cm−3 and 32 Ω cm, respectively, and the optical band-gap of the CIGSS absorber layer was 1.18 eV. Raman spectral analysis demonstrated the existence of many different phases, including CuInSe2, CuGaSe2, and CuInS2. This may be because the vibration frequencies of In–Se, In–S bonds are similar to the Ga–Se and Ga–S bonds, causing their absorption bands overlap.
Relation:	Physica B: Condensed Matter, 406(4): 824-830
Appears in Collections:	[Department of Mechatronics Engineering] Periodical Articles

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