National Changhua University of Education Institutional Repository : Item 987654321/12287
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题名: Influence of annealing temperature on properties of Cu(In,Ga)(Se,S)2 thin films prepared by co-sputtering from quaternary alloy and In2S3 targets
作者: Lin, Yi- Cheng;Yen, W. T.;Chen, Y. L.;Wanga, L. Q.;Jih, F. W.
贡献者: 機電工程系
关键词: Chalcopyrite;Cu(In,Ga)(Se,S)2;Quaternary target;Co-sputtering
日期: 2011-02
上传时间: 2012-07-05T07:11:20Z
出版者: Elsevier B.V.
摘要: Pentanary Cu(In,Ga)(Se,S)2 (CIGSS) thin films were deposited on soda-lime glass substrate by co-sputtering quaternary alloy, and In2S3 targets. In this study, we investigated the influence of post-annealing temperature on structural, compositional, electrical, and optical properties of CIGSS films. Our experimental results show that the CIGS quaternary target had chalcopyrite characteristics. All CIGSS films annealed above 733 K exhibited a polycrystalline tetragonal chalcopyrite structure, with (1 1 2) preferred orientation. The carrier concentration and resistivity of the resultant CIGSS layer annealed above 763 K was 4.86×1016 cm−3 and 32 Ω cm, respectively, and the optical band-gap of the CIGSS absorber layer was 1.18 eV. Raman spectral analysis demonstrated the existence of many different phases, including CuInSe2, CuGaSe2, and CuInS2. This may be because the vibration frequencies of In–Se, In–S bonds are similar to the Ga–Se and Ga–S bonds, causing their absorption bands overlap.
關聯: Physica B: Condensed Matter, 406(4): 824-830
显示于类别:[機電工程學系] 期刊論文

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