National Changhua University of Education Institutional Repository : Item 987654321/12288
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 6507/11669
造访人次 : 29619360      在线人数 : 273
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 进阶搜寻

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/12288

题名: Preparation and characterization of Cu(In,Ga)(Se,S)2 films without selenization by co-sputtering from Cu(In,Ga)Se2 quaternary and In2S3 targets
作者: Lin, Yi- Cheng;Ke, J. H.;Yen, W. T.;Liang, S. C.;Wu, C. H.;Chiang, C. T.
贡献者: 機電工程系
关键词: Cu(In,Ga)(Se,S)2;Co-sputter process;One-stage annealing
日期: 2011-02
上传时间: 2012-07-05T07:11:23Z
出版者: Elsevier B.V.
摘要: In this study, Cu(In,Ga)(Se,S)2 (CIGSS) thin films were deposited onto a bi-layer Mo coated soda-lime glass by co-sputtering a chalcopyrite Cu(In,Ga)Se2 (CIGS) quaternary alloy target and an In2S3 binary target. A one-stage annealing process was performed to form CIGSS chalcopyrite phase without post-selenization. Experimental results show that CIGSS films were prepared by the proposed co-sputter process via CIGS (70 W by radio frequency) and In2S3 (30 W by direct current) with a substrate temperature of 373 K, working pressure of 0.67 Pa, and one-stage annealing at 798 K for 30 min. The stoichiometry ratios of the CIGSS film were Cu/(In + Ga) = 0.92, Ga/(In + Ga) = 0.26, and Se/(S) = 0.49 that approached device-quality stoichiometry ratio (Cu/(In + Ga) < 0.95, Ga/(In + Ga) < 0.3, and (Se/S) ≈ 0.5). The resistivity of the sample was 14.8 Ω cm, with a carrier concentration of 3.4 × 1017 cm−3 and mobility of 1.2 cm2 V−1 s−1. The resulting film exhibited p-type conductivity with a double graded band-gap structure.
關聯: Applied Surface Science, 257(5): 4278-4284
显示于类别:[機電工程學系] 期刊論文

文件中的档案:

档案 大小格式浏览次数
index.html0KbHTML812检视/开启


在NCUEIR中所有的数据项都受到原著作权保护.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈