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|Title: ||Cu(In,Ga)Se2 films prepared by sputtering with a chalcopyrite Cu(In,Ga)Se2 quaternary alloy and In targets|
|Authors: ||Lin, Yi- Cheng;Lin, Z. Q.;Shen, C. H.;Wang, L Q.;Ha, C. T.;Peng, Chris|
|Issue Date: ||2012-07-05T07:11:27Z
|Publisher: ||Springer Science|
|Abstract: ||This study reports the successful preparation of Cu(In,Ga)Se2 (CIGS) thin film solar cells by magnetron sputtering with a chalcopyrite CIGS quaternary alloy target. Bi-layer Mo films were deposited onto soda lime glass. A CIGS quaternary alloy target was used in combination|
with a stack indium target for compensating the loss of indium during annealing process. A one-stage annealing process was performed to form CIGS chalcopyrite phase. Experimental results show that the optimal adhesion strength, residual stress, and resistivity were obtained at a
thickness ratio of 67% of bi-layer Mo films and a working pressure of 0.13 Pa. The CIGS precursor was layered through selenization at 798 K for 20 min. The stoichiometry ratios of the CIGS film were Cu/(In ? Ga) = 0.91 and Ga/(In ? Ga) = 0.23, which approached the device-quality
stoichiometry ratio (Cu/(In ? Ga)\0.95, and Ga/(In ? Ga) \0.3). The resistivity of the sample was 11.8 Xcm, with a carrier concentration of 3.6 9 1017 cm-3 and mobility of 1.45 cm2V-1s-1. The resulting film exhibited p-type conductivity.
|Relation: ||Journal of Materials Science: Materials in Electronics, 23(2): 493-500|
|Appears in Collections:||[機電工程學系] 期刊論文|
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