National Changhua University of Education Institutional Repository : Item 987654321/12289

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NCUEIR > College of Engineering > Department of Mechatronics Engineering > Periodical Articles > Item 987654321/12289

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12289

Title:	Cu(In,Ga)Se2 films prepared by sputtering with a chalcopyrite Cu(In,Ga)Se2 quaternary alloy and In targets
Authors:	Lin, Yi- Cheng;Lin, Z. Q.;Shen, C. H.;Wang, L Q.;Ha, C. T.;Peng, Chris
Contributors:	機電工程系
Date:	2012
Issue Date:	2012-07-05T07:11:27Z
Publisher:	Springer Science
Abstract:	This study reports the successful preparation of Cu(In,Ga)Se2 (CIGS) thin film solar cells by magnetron sputtering with a chalcopyrite CIGS quaternary alloy target. Bi-layer Mo films were deposited onto soda lime glass. A CIGS quaternary alloy target was used in combination with a stack indium target for compensating the loss of indium during annealing process. A one-stage annealing process was performed to form CIGS chalcopyrite phase. Experimental results show that the optimal adhesion strength, residual stress, and resistivity were obtained at a thickness ratio of 67% of bi-layer Mo films and a working pressure of 0.13 Pa. The CIGS precursor was layered through selenization at 798 K for 20 min. The stoichiometry ratios of the CIGS film were Cu/(In ? Ga) = 0.91 and Ga/(In ? Ga) = 0.23, which approached the device-quality stoichiometry ratio (Cu/(In ? Ga)\0.95, and Ga/(In ? Ga) \0.3). The resistivity of the sample was 11.8 Xcm, with a carrier concentration of 3.6 9 1017 cm-3 and mobility of 1.45 cm2V-1s-1. The resulting film exhibited p-type conductivity.
Relation:	Journal of Materials Science: Materials in Electronics, 23(2): 493-500
Appears in Collections:	[Department of Mechatronics Engineering] Periodical Articles

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