National Changhua University of Education Institutional Repository : Item 987654321/12289
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 6507/11669
造访人次 : 29721294      在线人数 : 391
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 进阶搜寻

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/12289

题名: Cu(In,Ga)Se2 films prepared by sputtering with a chalcopyrite Cu(In,Ga)Se2 quaternary alloy and In targets
作者: Lin, Yi- Cheng;Lin, Z. Q.;Shen, C. H.;Wang, L Q.;Ha, C. T.;Peng, Chris
贡献者: 機電工程系
日期: 2012
上传时间: 2012-07-05T07:11:27Z
出版者: Springer Science
摘要: This study reports the successful preparation of Cu(In,Ga)Se2 (CIGS) thin film solar cells by magnetron sputtering with a chalcopyrite CIGS quaternary alloy target. Bi-layer Mo films were deposited onto soda lime glass. A CIGS quaternary alloy target was used in combination
with a stack indium target for compensating the loss of indium during annealing process. A one-stage annealing process was performed to form CIGS chalcopyrite phase. Experimental results show that the optimal adhesion strength, residual stress, and resistivity were obtained at a
thickness ratio of 67% of bi-layer Mo films and a working pressure of 0.13 Pa. The CIGS precursor was layered through selenization at 798 K for 20 min. The stoichiometry ratios of the CIGS film were Cu/(In ? Ga) = 0.91 and Ga/(In ? Ga) = 0.23, which approached the device-quality
stoichiometry ratio (Cu/(In ? Ga)\0.95, and Ga/(In ? Ga) \0.3). The resistivity of the sample was 11.8 Xcm, with a carrier concentration of 3.6 9 1017 cm-3 and mobility of 1.45 cm2V-1s-1. The resulting film exhibited p-type conductivity.
關聯: Journal of Materials Science: Materials in Electronics, 23(2): 493-500
显示于类别:[機電工程學系] 期刊論文

文件中的档案:

档案 大小格式浏览次数
index.html0KbHTML906检视/开启


在NCUEIR中所有的数据项都受到原著作权保护.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈