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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12291

Title: Surface texturing of Ga-doped ZnO thin films by pulsed direct current magnetron sputtering for photovoltaic applications
Authors: Lin, Yi- Cheng;Yen, W. T.;Shen, C. H.;Yao, P. C.
Contributors: 機電工程系
Keywords: Ga-doped ZnO (GZO);Surface texturing;Thin films
Date: 2012-03
Issue Date: 2012-07-05T07:11:32Z
Publisher: Springer New York
Abstract: In this study, Ga-doped ZnO (GZO) transparent conducting thin films were prepared by pulsed direct-current magnetron sputtering, providing good transparency and relatively low resistivity. The films were further etched in different aqueous solutions, 0.5% HCl, 5% oxalic acid, and 33% KOH, to modify their light-scattering properties. The results showed that film textured by 0.5% HCl aq. for 30 s had total optical transparency of T total = 77.4% and haze value of H T = 0.16, with electrical resistivity of ρ = 4.9 × 10 −4 Ω-cm. For film textured in 5% oxalic acid solution for 75 s, the lowest electrical resistivity of 4.3 × 10 −4 Ω-cm was achieved with relatively high total optical transparency of T total = 75.1%, as well as a more ideal haze value of H T = 0.3. Film textured in 33% KOH solution for 135 s (500 nm thickness) had optimal electrical conductivity of 5.1 × 10 −4 Ω-cm with T total = 75.6%, and a relatively low haze value of H T = 0.12. GZO film textured with an agitated etch of 5% oxalic acid at 300 K would be the most suitable candidate for photovoltaic applications due to its high transparency and good electrical conducting properties.
Relation: Journal of Electronic Materials, 41(3): 442-450
Appears in Collections:[機電工程學系] 期刊論文

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