資料載入中.....
|
請使用永久網址來引用或連結此文件:
http://ir.ncue.edu.tw/ir/handle/987654321/12292
|
| 題名: | Effects of annealing temperature on properties of CuIn (Se,S)2 film prepared by sputtering |
| 作者: | Lin, Yi- Cheng;Chen, Z. J.;Wang, L. C. |
| 貢獻者: | 機電工程系 |
| 關鍵詞: | Chalcopyrite;CuIn(Ga)Se2;Sputtering |
| 日期: | 2012
|
| 上傳時間: | 2012-07-05T07:11:33Z
|
| 摘要: | This paper examines CuIn(Se,S)2 (CISS) films prepared by sputtering precursor films of In, Cu, and In2S3 onto Mo coated soda-lime glass, followed by a single-stage selenium annealing process to form a CISS chalcopyrite phase. In this study, S was substituted for Ga to increase the energy gap of CuInSe-based materials. Experimental results reveal that the composition of (S + Se) and S decreased slightly with an increase in the selenium annealing temperature, exhibiting uniform distribution throughout the entire CISS film sample. The resulting CISS film exhibited p-type conductivity with an energy gap of 1.11eV. The optimum selenium annealing condition for the CIGS precursor prepared by sputtering was 798 K for 20 minutes. |
| 關聯: | Applied Mechanics and Materials, 117-119: 1284-1288 |
| 顯示於類別: | [機電工程學系] 期刊論文
|
文件中的檔案:
| 檔案 |
大小 | 格式 | 瀏覽次數 |
|---|
| 2050100210006.pdf | 83Kb | Adobe PDF | 689 | 檢視/開啟 |
|
在NCUEIR中所有的資料項目都受到原著作權保護.
|
