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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12292

Title: Effects of annealing temperature on properties of CuIn (Se,S)2 film prepared by sputtering
Authors: Lin, Yi- Cheng;Chen, Z. J.;Wang, L. C.
Contributors: 機電工程系
Keywords: Chalcopyrite;CuIn(Ga)Se2;Sputtering
Date: 2012
Issue Date: 2012-07-05T07:11:33Z
Abstract: This paper examines CuIn(Se,S)2 (CISS) films prepared by sputtering precursor films of In, Cu, and In2S3 onto Mo coated soda-lime glass, followed by a single-stage selenium annealing process to form a CISS chalcopyrite phase. In this study, S was substituted for Ga to increase the energy gap of CuInSe-based materials. Experimental results reveal that the composition of (S + Se) and S decreased slightly with an increase in the selenium annealing temperature, exhibiting uniform distribution throughout the entire CISS film sample. The resulting CISS film exhibited p-type conductivity with an energy gap of 1.11eV. The optimum selenium annealing condition for the CIGS precursor prepared by sputtering was 798 K for 20 minutes.
Relation: Applied Mechanics and Materials, 117-119: 1284-1288
Appears in Collections:[機電工程學系] 期刊論文

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