National Changhua University of Education Institutional Repository : Item 987654321/12292
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 6487/11649
造访人次 : 28508116      在线人数 : 404
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 进阶搜寻


题名: Effects of annealing temperature on properties of CuIn (Se,S)2 film prepared by sputtering
作者: Lin, Yi- Cheng;Chen, Z. J.;Wang, L. C.
贡献者: 機電工程系
关键词: Chalcopyrite;CuIn(Ga)Se2;Sputtering
日期: 2012
上传时间: 2012-07-05T07:11:33Z
摘要: This paper examines CuIn(Se,S)2 (CISS) films prepared by sputtering precursor films of In, Cu, and In2S3 onto Mo coated soda-lime glass, followed by a single-stage selenium annealing process to form a CISS chalcopyrite phase. In this study, S was substituted for Ga to increase the energy gap of CuInSe-based materials. Experimental results reveal that the composition of (S + Se) and S decreased slightly with an increase in the selenium annealing temperature, exhibiting uniform distribution throughout the entire CISS film sample. The resulting CISS film exhibited p-type conductivity with an energy gap of 1.11eV. The optimum selenium annealing condition for the CIGS precursor prepared by sputtering was 798 K for 20 minutes.
關聯: Applied Mechanics and Materials, 117-119: 1284-1288
显示于类别:[機電工程學系] 期刊論文


档案 大小格式浏览次数
2050100210006.pdf83KbAdobe PDF626检视/开启



DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈