English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6498/11670
Visitors : 25673668      Online Users : 128
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12311

Title: Parameter optimization for an ICP deep silicon etching system
Authors: Chen, Shih-Chang;Lin, Yi- Cheng;Wu, J. C.;Horng, L.;Cheng, C. H.
Contributors: 機電工程系
Date: 2005-06
Issue Date: 2012-07-05T07:13:54Z
Abstract: The paper aims at investigating the parameter optimization of silicon micro- and nano-sized etching by an ICP-RIE (Inductive-Coupled-Plasma Reactive-Ion-Etching) system. The source power and the SF6 gas pressure are two main parameters that dominate etching. A pre-test is conducted to estimate the process window of the SF6 gas pressure at some given source powers. The process window is a parameter range in which the etching result is acceptable but may not be the best. In order to achieve excellent etching quality, the Taguchi experimental method is applied to evaluate parameters and find their optimum conditions. With the source power and SF6 gas pressure being set into the process window, four parameters, which are the substrate temperature, the bias power, the gas cycle time and the C4F8 gas flow rate, are evaluated and optimized for microand nano-sized etching. An impressive result, 200nm-diameter pillar array with the pitch of 400nm, is realized.
Relation: 6th High Aspect Ratio Micro Structure Technology Workshop (HARMST 2005), Gyeongju, Korea, June 10-13, 2005: 184-185
Appears in Collections:[機電工程學系] 會議論文

Files in This Item:

File SizeFormat
2050100216008.pdf84KbAdobe PDF796View/Open

All items in NCUEIR are protected by copyright, with all rights reserved.


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback