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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12317

Title: Influences on optoelectronic properties of damp heat stability of AZO and GZO for thin film solar cells
Authors: Yen, Wen-Tsai;Ke, Jia-Hong;Wang, Hsin-Jung;Lin, Yi- Cheng;Chiang, Jung-Lung
Contributors: 機電工程系
Keywords: Damp heat;Optoelectronic;Pulsed DC magnetron sputtering;ZnO:Al;ZnO:Ga
Date: 2009-09
Issue Date: 2012-07-05T07:14:17Z
Abstract: This study investigates the effects of damp heat stability on the optoelectronic properties of ZnO:Al (AZO) and ZnO:Ga(GZO) films with respect to thin-film solar cells. The lowest resistivities of AZO and GZO thin films are 8.2621×10-4 Ω-cm and 2.8561×10-4 Ω-cm, respectively. After damp heat testing for 999h, the resistivities of AZO and GZO thin film increase by 39.72% and 11.97%, respectively. XPS binding energy analysis shows that the AZO thin film has a higher O 1s spectrum than the GZO thin film. Thus, the carrier concentration of films decreases, as a higher binding energy is attributed to the chemisorbed oxygen atoms (O-). Experimental results show that after expousre to a damp heat test at 85℃ and 85% relative humidity for electrical, optical, structural, and morphological analysis, GZO films are more stable than AZO films.
Relation: The 2nd International Conference on Multi-functional Materials and Structures, China, October 9-12, 2009
Appears in Collections:[機電工程學系] 會議論文

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