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http://ir.ncue.edu.tw/ir/handle/987654321/12317
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| Title: | Influences on optoelectronic properties of damp heat stability of AZO and GZO for thin film solar cells |
| Authors: | Yen, Wen-Tsai;Ke, Jia-Hong;Wang, Hsin-Jung;Lin, Yi- Cheng;Chiang, Jung-Lung |
| Contributors: | 機電工程系 |
| Keywords: | Damp heat;Optoelectronic;Pulsed DC magnetron sputtering;ZnO:Al;ZnO:Ga |
| Date: | 2009-09
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| Issue Date: | 2012-07-05T07:14:17Z
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| Abstract: | This study investigates the effects of damp heat stability on the optoelectronic properties of ZnO:Al (AZO) and ZnO:Ga(GZO) films with respect to thin-film solar cells. The lowest resistivities of AZO and GZO thin films are 8.2621×10-4 Ω-cm and 2.8561×10-4 Ω-cm, respectively. After damp heat testing for 999h, the resistivities of AZO and GZO thin film increase by 39.72% and 11.97%, respectively. XPS binding energy analysis shows that the AZO thin film has a higher O 1s spectrum than the GZO thin film. Thus, the carrier concentration of films decreases, as a higher binding energy is attributed to the chemisorbed oxygen atoms (O-). Experimental results show that after expousre to a damp heat test at 85℃ and 85% relative humidity for electrical, optical, structural, and morphological analysis, GZO films are more stable than AZO films. |
| Relation: | The 2nd International Conference on Multi-functional Materials and Structures, China, October 9-12, 2009 |
| Appears in Collections: | [機電工程學系] 會議論文
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Size | Format | |
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| 2050100216009.pdf | 175Kb | Adobe PDF | 538 | View/Open |
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