National Changhua University of Education Institutional Repository : Item 987654321/12317
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 6498/11670
造访人次 : 26692548      在线人数 : 93
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 进阶搜寻


题名: Influences on optoelectronic properties of damp heat stability of AZO and GZO for thin film solar cells
作者: Yen, Wen-Tsai;Ke, Jia-Hong;Wang, Hsin-Jung;Lin, Yi- Cheng;Chiang, Jung-Lung
贡献者: 機電工程系
关键词: Damp heat;Optoelectronic;Pulsed DC magnetron sputtering;ZnO:Al;ZnO:Ga
日期: 2009-09
上传时间: 2012-07-05T07:14:17Z
摘要: This study investigates the effects of damp heat stability on the optoelectronic properties of ZnO:Al (AZO) and ZnO:Ga(GZO) films with respect to thin-film solar cells. The lowest resistivities of AZO and GZO thin films are 8.2621×10-4 Ω-cm and 2.8561×10-4 Ω-cm, respectively. After damp heat testing for 999h, the resistivities of AZO and GZO thin film increase by 39.72% and 11.97%, respectively. XPS binding energy analysis shows that the AZO thin film has a higher O 1s spectrum than the GZO thin film. Thus, the carrier concentration of films decreases, as a higher binding energy is attributed to the chemisorbed oxygen atoms (O-). Experimental results show that after expousre to a damp heat test at 85℃ and 85% relative humidity for electrical, optical, structural, and morphological analysis, GZO films are more stable than AZO films.
關聯: The 2nd International Conference on Multi-functional Materials and Structures, China, October 9-12, 2009
显示于类别:[機電工程學系] 會議論文


档案 大小格式浏览次数
2050100216009.pdf175KbAdobe PDF585检视/开启



DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈