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|Issue Date: ||2012-07-05T07:23:10Z
The objective of this sub-project is to establish nanofabrication processes for researcher in the central part of Taiwan. Related facilities were allocated and purchased in the past three years through overall integration and sharing within the joint-project. During the last three years the equipments purchased are inductively coupled plasma reactive ion etcher (ICP RIE), high pressure reactor chamber equipped with FTIR, molecular beam epitaxy (MBE), and ion beam sputtering machine. Together with the expertise of lithography, such as photolithography and electron beam lithography, built up in the past in this campus it is the final goal as to develop nanofabrication processes. With the ICP RIE technique associated with the electron beam lithography a NEMS process has been set up with the capability of making 100nm silicon pillar array which has pillar height to diameter aspect ratio of 40. The goal of MBE is to make low dimensional devices of light emitting and laser diodes of GaN multilayer and other semiconductor systems. The high pressure reactive chamber has enabled us to synthesize TiO2 nanowires. The ion beam sputtering system expected to be set up soon is mainly focused on the magnetic multilayer systems. Overall speaking, we have built up a nanofabrication center through existed and newly purchased equipments and these will enable us and others in the central part of Taiwan to have better chance in the research of nanotechnology related fields.
|Relation: ||計畫編號:NSC94-2120-M018-001; 研究期間:2005/08-2006/07|
|Appears in Collections:||[機電工程學系] 國科會計畫|
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