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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12337

Title: 脈衝磁控濺鍍製備TCO薄膜及其表面粗化於薄膜太陽能電池
Deposition and Texturing of TCO Thin Films for Thin Film Solar Cells Using Pulsed DC Magnetron Sputtering
Authors: 林義成
Contributors: 機電工程系
Keywords: AZO(ZnO:Al);表面粗化;直流脈;衝磁控濺鍍
Al-doped ZnO;Surface textured;Light trapping structure;Haze value;Pulsed DC magnetron sputtering
Date: 2010-06
Issue Date: 2012-07-05T07:24:06Z
Publisher: 行政院國家科學委員會
Abstract: 本研究計畫主要目的採用脈衝磁控濺鍍製備AZO(ZnO:Al)與 GZO(ZnO:Ga)薄膜,沈積於Soda-lime 玻璃基板上,並藉由化學濕式蝕
刻進行薄膜表面粗化,於不同蝕刻時間下觀察薄膜對可見光之漫透射率與光電性質之影響。並透過調變濺鍍功率、工作壓力、脈衝頻率、薄膜厚度和基板溫度等參數來製備具最佳光電結構特性之 AZO 與 GZO 薄膜。其次,以0.5%HCl、5%Oxalic acid 及 33%KOH三種不同的蝕刻液,調變蝕刻時間進行 AZO 與 GZO薄膜表面粗化使其具有陷光結構;探討薄膜蝕刻後對電性、可見光的穿透及散射之影響。研究中利用薄膜測厚儀量測其薄膜厚度及沈積率、能量分散光譜儀量測成分含量、霍爾量測儀量測電阻率、載子濃度和載子遷移率、X 光繞射儀做薄膜結構性分析、X 光射線光電子能譜儀來觀察薄膜的表面元素的化學性質及成分比例、熱場發射掃描式電子顯微鏡與原子力顯微鏡量測設備進一步瞭解薄膜表面型態,利用光譜儀做光穿透率量測,並以可變角度多功能光學特性檢測系統做總透射率與鏡面透射率量測,藉此換算出漫透射率的光譜圖。研究 TCO薄膜粗化之技術並應用於薄膜太陽能電池上,以期許研發開可行之製程技術,盼能有效降低TCO 薄膜粗化製程成本之比例。
Transparent conducting thin films of ZnO:Al (Al-doped ZnO, AZO) were prepared via pulsed DC magnetron sputtering with good transparency and relatively lower resistivity. The AZO films with 800nm in thickness were deposited on soda-lime glass substrates keeping at 473K under 0.4Pa working pressure, 150W power, 100μs duty time, 5μs pulse reverse time, 10kHz pulse frequency and 95% duty cycle. The as-deposited AZO thin films has resistivity of 6.39×10-4Ωcm measured at room temperature with average visible optical transmittance, Ttotal of 81.9% under which the carrier concentration and mobility were 1.95×1021cm-3 and 5.02 cm2V-1S-1, respectively. The films were further etched in different aqueous solutions, 0.5%HCl, 5% Oxalic acid, 33%KOH, to conform light scattering properties. The resultant films etched in 0.5% HCl solution for 30 seconds exhibited high Ttotal=78.4% with haze value, HT = 0.1 and good electrical properties, ρ=8.5×10-4Ωcm while those etched in 5% oxalic acid for 150s had desirable HT =0.2 and relatively low electrical resistivity, ρ=7.9×10-4Ωcm. However, the visible transmittance, Ttotal was declined to 72.1%.
Relation: 計畫編號:NSC98-2622-E018-002-CC3; 研究期間:2009/07- 2010/06
Appears in Collections:[機電工程學系] 國科會計畫

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