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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12423

Title: 氮化銦鎵單一量子井雷射元件的理論模擬
Authors: 洪國凱;郭艷光
Contributors: 物理學系
Keywords: 氮化銦鎵;雷射二極體;光學特性;數值模擬
InGaN;Laser diode;Optical property;Numerical simulation
Date: 2000-12
Issue Date: 2012-07-19T01:46:07Z
Publisher: 中華民國光學工程學會
Abstract: 本論文使用LASTIP模擬軟體,來分析氮化銦鎵元件的各項光學與電子特性。首先,我們調整模擬軟體所使用的各項參數,使LASTIP數值模擬的結果與光學量測的結果在發光特性上取得良好的一致性。接下來,我們使用這些參數進一步模擬In0.18 Ga0.82 N/GaN單一量子井雷射的光學與電子特性,並探討臨界電流與量子效率等雷射性能與溫度之閒的關係。
The optical and the electronic properties of the InGaN semiconductor devices are numerically investigated with a commercial LASTIP simulation program. Firstly, the parameters used in the simulation program arc adjusted so that the emission characteristics obtained from the simulation program is in good agreement with that obtained from the photoluminescence measurements. These parameters are then utilized to study the optical and the electric properties of an In0.l8Ga0.82N/GaN single quantum well laser diode. The relation between the important laser performance factors, such as the threshold current and the slope efficiency of the In0.18Ga0.82N/GaN laser diode, and the temperature is also investigated.
Relation: 光學工程, 72: 66-71
Appears in Collections:[物理學系] 期刊論文

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