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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12424

Title: 電子溢流對氮化銦鎵多量子井元件光學特性之影響
Authors: 張誌原;郭艷光
Contributors: 物理學系
Keywords: 氮化銦鎵;雷射二極體;光學特性;數值模擬
InGaN;Laser diode;Optical property;Numerical simulation
Date: 2001-03
Issue Date: 2012-07-19T01:46:09Z
Publisher: 中華民國光學工程學會
Abstract: 我們使用商用的LASTIP模擬軟體,來探討氮化銦鎵多量子井元件在不同溫度時的電子溢流現象。研究結果顯示,在p層的摻雜濃度較低時,氮化銦鎵多量子井結構在室溫時,就有大量的電子會溢流至p層。這種電子溢流的現象,在高溫時顯得尤其嚴重。模擬結果同時也顯示,這些P層摻雜濃度較低的氮化銦鎵元件的雷射性能,在高溫時也有惡化的現象。如果使用p型的氮化鋁鎵Cap Layer來取代p型的銦鎵Cap Layer,電子溢流的現象可以獲得相當程度的改善,氮化銦鎵元件的雷射性能也同時跟著大幅提升。
The current overflow problem of the InGaN quantum well structure is numerically investigated with a commercial LASTIP simulation program at various temperatures. The current overflow to the p-side of the InGaN quantum well device can easily be observed at room temperature when the doping level of the p-cladding layers is low. The current overflow problem becomes more severe at elevated temperatures. Simulation results also indicate that the laser performance of the InGaN quantum well structure becomes poor at elevated temperatures. If an AlGaN cap layer is used to replace the GaN cap layer, the current overflow problem may be largely improved, which in turn results in a better laser performance of the InGaN quantum well structure.
Relation: 光學工程, 73: 45-50
Appears in Collections:[物理學系] 期刊論文

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