National Changhua University of Education Institutional Repository : Item 987654321/12428
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题名: Band-Gap Bowing Parameter of the InxGa1-xN Derived From Theoretical Simulation
作者: Kuo, Yen-Kuang;Lin, Wen-Wei;Lin, Jiann
贡献者: 物理學系
关键词: InGaN;Band-gap energy;Band-gap bowing parameter;Numerical study
日期: 2001-05
上传时间: 2012-07-19T01:46:19Z
出版者: The Japan Society of Applied Physics
摘要: The band-gap energy and band-gap bowing parameter of the wurtzite InGaN alloys are investigated numerically with the CASTEP simulation program. The simulation results suggest that the unstrained band-gap bowing parameter for the wurtzite InGaN alloys is b=1.21±0.03 eV. The simulation results also show that the width of the InxGa1-xN top valence band at the Γ point decreases when the indium composition increases and has a value of 7.331 eV for the GaN (x=0) and 6.972 eV for the In0.375Ga0.625N (x=0.375).
關聯: Japanese Journal of Applied Physics, 40(5A): 3157-3158
显示于类别:[物理學系] 期刊論文

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