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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12430

Title: 紫外光氮化鎵面射型半導體雷射之設計與分析
Design and Analysis of an Ultraviolet GaN Vertical-Cavity Surface-Emitting Laser
Authors: 洪國凱;張誌原;黃旭晴;郭艷光
Contributors: 物理學系
Keywords: 氮化鎵;面射型雷射;光學特性;數值模擬
GaN;VCSEL;Optical properties;Numerical simulation
Date: 2001-06
Issue Date: 2012-07-19T01:46:21Z
Publisher: 中華民國光學工程學會
Abstract: 本文主要利用理論模擬的方法,來探討經由電激發的紫外光氮化鎵面射型半導體雷射的光學特性,我們所使用的氮化鋁鎵布拉格反射鏡(DBR)的材料爲Al0.12Ga0.88N/Al0.40Ga0.60N。在高反射鏡部分,其DBR對數爲50對,在我們所設計的雷射波長350 nm附近所對應的反射率爲0.995;另一方面,雷射輸出鏡由40對的DBR所組成,其對應的反射率爲0.992。在室溫時,此一具有三個GaN/Al0.20Ga0.80N多量子井活性區的面射型半導體雷射的臨界電流約爲60mA。
The optical properties of an electrically pumped ultraviolet GaN vertical-cavity surface-emitting laser are numerically investigated. The distributed Bragg reflector consists of Al0.12 Ga0.88 N/Al0.40 Ga0.60 N that has a maximum reflectivity of 0.995 for 50 pairs (for high reflecting mirror) and 0.992 for 40 pairs (for laser output coupling mirror) at the designed laser wavelength, 350 nm. The threshold current of this vertical-cavity surface-emitting laser, which has three GaN/Al0.20 Ga0.80 N quantum wells in the active region, is about 60 mA at room temperature.
Relation: 光學工程, 74: 48-52
Appears in Collections:[物理學系] 期刊論文

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