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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12434

Title: Band-Gap Bowing Parameter of the AlxGa1-xN Derived from Theoretical Simulation
Authors: Kuo, Yen-Kuang;Lin, Wen-Wei
Contributors: 物理學系
Keywords: AlGaN;Band-gap energy;Band-gap bowing parameter;Numerical study
Date: 2002-01
Issue Date: 2012-07-19T01:46:26Z
Publisher: The Japan Society ofApplied Physics
Abstract: The band-gap energy and band-gap bowing parameter of the wurtzite AlGaN alloys are investigated numerically with the CASTEP simulation program. The simulation results suggest that the unstrained band-gap bowing parameter of the wurtzite AlGaN alloys is b = 0.353 ±0.024 eV. The simulation results also show that the width of the AlxGa1-xN top valence band at the Γ point decreases when the aluminum composition increases and has a value of 7.331 eV for the GaN (x=0) and 6.132 eV for the AlN (x=1).
Relation: Japanese Journal of Applied Physics, 41(1): 73-74
Appears in Collections:[物理學系] 期刊論文

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