English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6498/11670
Visitors : 25702177      Online Users : 85
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12434

Title: Band-Gap Bowing Parameter of the AlxGa1-xN Derived from Theoretical Simulation
Authors: Kuo, Yen-Kuang;Lin, Wen-Wei
Contributors: 物理學系
Keywords: AlGaN;Band-gap energy;Band-gap bowing parameter;Numerical study
Date: 2002-01
Issue Date: 2012-07-19T01:46:26Z
Publisher: The Japan Society ofApplied Physics
Abstract: The band-gap energy and band-gap bowing parameter of the wurtzite AlGaN alloys are investigated numerically with the CASTEP simulation program. The simulation results suggest that the unstrained band-gap bowing parameter of the wurtzite AlGaN alloys is b = 0.353 ±0.024 eV. The simulation results also show that the width of the AlxGa1-xN top valence band at the Γ point decreases when the aluminum composition increases and has a value of 7.331 eV for the GaN (x=0) and 6.132 eV for the AlN (x=1).
Relation: Japanese Journal of Applied Physics, 41(1): 73-74
Appears in Collections:[物理學系] 期刊論文

Files in This Item:

File SizeFormat

All items in NCUEIR are protected by copyright, with all rights reserved.


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback