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题名: 黃綠光磷化鋁鎵銦面射型半導體雷射光學特性之模擬分析
Numerical Analysis on Optical Properties of Yellowish Green AlGaInP Vertical-Cavity Surface-Emitting Lasers
作者: 黃雅蓮;郭艷光
贡献者: 物理學系
关键词: 磷化鋁鎵銦;面射型半導體雷射;模擬分析
AlGaInP;Vertical-Cavity Surface-Emitting Laser;Numerical Simulation
日期: 2002-09
上传时间: 2012-07-19T01:46:32Z
出版者: 中華民國光學工程學會
摘要: 磷化鋁鎵銦面射型半導體雷射在近幾年來引起許多的注意與研究，若干研究機構已經設計並且製造出650nm左右的紅光面射型半導體雷射，最近波長更短的黃光乃至於黃綠光，也開始引起研究人員與業界的注意。由於磷化鋁鎵銦的發光波長在小於555nm的情況下，其能帶結構逐漸轉為間接能隙結構，因此發光效率會大受影響。但是在570nm左右的黃綠光區，磷化鋁鎵銦事實上還有不錯的發光效率，此一波長的發光二極體在市場上也佔有相當的地位，所以成長570nm黃綠光磷化鋁鎵銦面射型半導體雷射的可能性應該是很高的。在本文中，我們首先說明570nm黃綠光磷化鋁鎵銦面射型半導體雷射的重要性，接著我們使用PICS3D模擬軟體來證明成長570nm黃綠光面射型半導體雷射的可行性，並且藉由探討此一雷射結構的光學特性，進而設計出較佳的元件結構，提供給長品人員做為成長此一面射型半導體雷射結構的參考。
The AlGaIaP vertical-cavity surface-emitting lasers (VCSEL) have received much attention in the past few Years. Several research institutes have designed and manufactured red VCSEL with emitting wavelengths near 650 nm. Quite recently, researchers and commercial companies have paid special attention to the VCSEL of even Shorter wavelengths in the yellow and yellowish green spectral range. The emission efficiency of the AlGaInP Semiconductor materials becomes poor when the emitting wavelength is shorter than 555 nm due to its indirect band gap characteristics. However, the AlGaInP still has good emission efficiency when its emitting wavelength is near 570 nm. This is one of the major reasons why the 570nm AlGaInP light emitting diodes (LED) still play an important role in the LED market. Therefore, the growth of a 570nm yellowish green AlGaInP VCSEL is feasible. In this paper, we firstly explain the importance of developing the 570nm yellowish green AlGaInP VCSEL. We then justify the feasibility of growing a 570nm yellowish green AlGaInP VCSEL and investigate the optical properties of this VCSEL with a PICS3D simulation program. Finally, we intend to design an optimized structure that could possibly be used as a reference for those researchers who wish to grow this specific VCSEL.
關聯: 光學工程, 79: 87-100
显示于类别:[物理學系] 期刊論文

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