National Changhua University of Education Institutional Repository : Item 987654321/12449
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6507/11669
Visitors : 29729864      Online Users : 534
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12449

Title: Zincblende結構三元氮化物的能帶模擬與分析
Authors: 林文偉;郭艷光;劉柏挺
Contributors: 物理學系
Keywords: 光電半導體材料;Zincblende結構三元氮化物
Date: 2003-08
Issue Date: 2012-07-19T01:46:45Z
Publisher: 中華民國物理學會
Abstract: 本文使用CASTEP 模擬軟體來計算zincblende 結構三元氮化物的能帶,並從能帶間隙的分析
進而探討三元氮化物的材料特性。模擬結果顯示,InxGa1-xN 為直接能隙材料,其直接能隙的彎曲
係數b = 1.379 eV,而間接能隙的b = 1.672 eV。AlxGa1-xN 在Al 濃度小於0.571 時為直接能隙
材料,而Al 濃度大於0.571 時為間接能隙材;直接能隙的彎曲係數b = 0.755 eV,而間接能隙b
= 0.296 eV。AlxIn1-xN 在Al 濃度小於0.244 時為直接能隙材料,而Al 濃度大於0.244 時為間接
能隙材料;直接能隙的彎曲係數b = 2.729 eV,而間接能隙b = 3.624 eV。此外,上述三種三元
氮化物的上價電帶厚度皆比下價電帶厚度大,而下價電帶厚度受Al 濃度的影響較為顯著。
Relation: 物理雙月刊, 25(4): 582-591
Appears in Collections:[Department of Physics] Periodical Articles

Files in This Item:

File SizeFormat
index.html0KbHTML624View/Open


All items in NCUEIR are protected by copyright, with all rights reserved.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback