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Title: 導電帶與價電帶井深比例對藍光氮化銦鎵量子井雷射載子分佈與光學特性的影響
Effect of Band-Offset Ratio on Carrier Distribution and Optical Properties of Blue InGaN Quantum-Well Lasers
Authors: 陳秀芬;謝尚衛;劉柏挺;郭艷光
Contributors: 物理學系
Keywords: 氮化銦鎵;藍光量子井雷射;導電帶與價電帶井深比例;數值模擬
InGaN;Blue quantum-well lasers;Band-offset ratio;Numerical simulation
Date: 2003-12
Issue Date: 2012-07-19T01:46:49Z
Publisher: 中華民國光學工程學會
Abstract: 導電帶與價電帶井深比例(band-offset ratio, △E(上标 c):△E(下标 v)在分析其量子井結構的元件特性土,是一個很重要的參數。本文使用LASTIP模擬軟體分析藍光氮化銦鎵量子井雷射之電子與光學特性,探討導電帶與價電帶井深比例對電子溢流、電洞不均勻性、以及不同量子井個數情況下發光效能的影響。氮化銦鎵量子井異質結構(In(subscript x)Ga(subscript 1-x)N/In(subscript y)Ga(subscript 1-yN)確切的導電帶典價電帶井深比例在學術屆至今尚未有定論,在2002年之前,多數研究者認為△E(上标 c):△E(下标 v)=3:7;2002年之後,△E(上标 c):△E(下标 v)=7:3則被多數人所認同。我們的研究結果顯示,當導電帶典價電帶井深比例由3:7 改為7:3時,發光波長呈現藍位移的現象、原有的電子溢流現象變得很不明顯、電洞不均勻分佈的現象也有所改善,因此發光效率較好,臨界電流也較低。在變化元件的量子井個數之後發現,在△E(上标 c):△E(下标 v)=7:3的情況之下,對多量子井結構而言,雖然原本的電子溢流以及電洞不均勻分佈等現象都有所改善,但是因為電子濃度在活性區各量子井的分佈變得不均勻,使得單量子井藍光氮化銦鎵雷射還是擁有最佳的雷射性能。雖然造成這一項結果的原因與血△E(上标 c):△E(下标 v)=3:7的情況有所不同,但是單量子井藍光雷射擁有最佳雷射性能的結論與△E(上标 c):△E(下标 v) =3:7的情況之下所得到的結論卻是一致的。
characteristics of quantum-well structures. In this paper, the electronic and optical properties of the blue InGaN quantum-well lasers are studied numerically with the LASTIP simulation program. Specifically, the effects of the band-offset ratio on the electronic current overflow, the inhomogeneous hole distribution, and the laser performance for various quantum-well structures are investigated. To date, there is still no common agreement on the band-offset ratio of In(subscript x)Ga(subscript 1-x)N/1n(subscript y)Ga(subscript 1-y)N well/barrier heterojunctions among the researchers. Before the year 2002, △E(subscript c):△E(subscript v)=3:7 was generally used by most researchers. However, after the year 2002, △E(subscript c):△E(subscript v)=7:3 turned out to be commonly accepted by most researchers. The results of our simulations indicate that, when the band-offset ratio is changed from 3:7 to 7:3, the emission wavelength has a blue shift and the problems of electronic current overflow and inhomogeneous hole distribution are largely improved, which results in a decrease in the laser threshold and an increase in the slope efficiency. It is noteworthy that, although the problems of electronic current overflow and inhomogeneous hole distribution are largely improved, the distribution of the electronic concentrations in different quantum wells in the active region becomes less homogeneous when the band-offset ratio is changed from 3:7 to 7:3. Consequently, when the band-offset ratio is 7:3, the single quantum-well blue laser structure still has the best laser performance compared to the other multiple quantum-well laser structures. Although the cause of this conclusion is different from when the band-offset ratio is 3:7, the single quantum-well blue laser structure having the best laser performance is concluded, which is the same as the situation when the band-offset ratio is 3:7.
Relation: 光學工程, 84: 70-80
Appears in Collections:[物理學系] 期刊論文

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