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http://ir.ncue.edu.tw/ir/handle/987654321/12455
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| Title: | Effect of Band-offset Ratio on Analysis of Violet-blue InGaN Laser Characteristics |
| Authors: | Kuo, Yen-Kuang;Liou, Bo-Ting;Chen, Mei-Ling;Yen, Sheng-Horng;Lin, Cheng-Yang |
| Contributors: | 物理學系 |
| Keywords: | Semiconductor lasers;Optical properties;Numerical simulation;III–V semiconductors |
| Date: | 2004-02
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| Issue Date: | 2012-07-19T01:46:54Z
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| Publisher: | Elsevier |
| Abstract: | The characteristics of the violet–blue InGaN quantum-well lasers with an emission wavelength of 400–480 nm when the band-offset ratio of the InxGa1−xN/InyGa1−yN heterojunction is 3/7, which was most frequently used before, and 7/3, which is accepted recently by most researchers, are studied numerically. Specifically, the characteristics of the electronic current overflow, stimulated recombination rate, and laser performance are discussed. Meanwhile, the relationship between the threshold current and the number of quantum wells in the InGaN quantum-well laser is investigated. Simulation results suggest that, when the band-offset ratio is 7/3, the lowest threshold current of the violet–blue InGaN quantum-well lasers is obtained when the number of InGaN well layers is two if the emission wavelength is shorter than 450 nm, and one if the emission wavelength is longer than 450 nm. |
| Relation: | Optics Communications, 231(1-6): 395-402 |
| Appears in Collections: | [物理學系] 期刊論文
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