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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12456

Title: 紫藍光氮化銦鎵量子井雷射之模擬與分析
Simulation of Violet-Blue InGaN Quantum-Well Lasers
Authors: 張詒安;郭艷光;郭浩中;王興宗
Contributors: 物理學系
Keywords: S InGaN;Inhomogeneous Carrier Distribution;Numerical Simulation
Date: 2004-03
Issue Date: 2012-07-19T01:46:55Z
Publisher: 中華民國光學工程學會
Abstract: The optical properties of violet-blue InGaN quantum-well (QW) ridge waveguide (RWG) laser diodes (LDs) are numerically investigated with a LASTIP simulation program. The results obtained numerically indicate that best laser performance is obtained when the number of InGaN well layers is two if the emission wavelength is shorter than ~427 nm and one if the emission wavelength is longer than ~427 nm. The results obtained numerically also suggest that, in addition to the dissociation of the high indium content InGaN well layer at a high growth temperature during crystal growth, the inhomogeneous carrier distribution in the QWs also plays an important role in the optical performance of the InGaN QW LDs with an emission wavelength of 392-461 nm.
Relation: 光學工程, 85: 47-58
Appears in Collections:[物理學系] 期刊論文

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