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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12457

Title: Effects of Electronic Current Overflow and Inhomogeneous Carrier Distribution on InGaN Quantum-Well Laser Performance
Authors: Kuo, Yen-Kuang;Chang, Yi-An
Contributors: 物理學系
Keywords: InGaN;Numerical simulation;Optical properties;Semiconductor lasers
Date: 2004-05
Issue Date: 2012-07-19T01:46:56Z
Publisher: IEEE
Abstract: Abstract—Laser performance of several InGaN quantum-well
(QW) lasers with an emission wavelength of 392–461 nm are numerically
studied with a LASTIP simulation program. Specifically,
the effects of electronic current overflow and inhomogeneous carrier
distribution on the laser performance of InGaN QW lasers
operating at different wavelengths are investigated. Simulation results
indicate that the use of an AlGaN blocking layer can help reduce
the electronic current overflow and, in addition to the dissociation
of the InGaN well layer at a high growth temperature
during crystal growth, the inhomogeneous carrier distribution in
the QWs also plays an important role in the laser performance.
From the simulation results, we conclude that the lowest threshold
current density is obtained when the number of InGaN well layers
is two if the emission wavelength is shorter than 427 nm and one if
the emission wavelength is longer than 427 nm, which are in good
agreement with the results observed by Nakamura et al. in their
Relation: IEEE Journal of Quantum Electronics, 40(5): 437-444
Appears in Collections:[物理學系] 期刊論文

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