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| 題名: | Effects of Electronic Current Overflow and Inhomogeneous Carrier Distribution on InGaN Quantum-Well Laser Performance |
| 作者: | Kuo, Yen-Kuang;Chang, Yi-An |
| 貢獻者: | 物理學系 |
| 關鍵詞: | InGaN;Numerical simulation;Optical properties;Semiconductor lasers |
| 日期: | 2004-05
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| 上傳時間: | 2012-07-19T01:46:56Z
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| 出版者: | IEEE |
| 摘要: | Abstract—Laser performance of several InGaN quantum-well
(QW) lasers with an emission wavelength of 392–461 nm are numerically
studied with a LASTIP simulation program. Specifically,
the effects of electronic current overflow and inhomogeneous carrier
distribution on the laser performance of InGaN QW lasers
operating at different wavelengths are investigated. Simulation results
indicate that the use of an AlGaN blocking layer can help reduce
the electronic current overflow and, in addition to the dissociation
of the InGaN well layer at a high growth temperature
during crystal growth, the inhomogeneous carrier distribution in
the QWs also plays an important role in the laser performance.
From the simulation results, we conclude that the lowest threshold
current density is obtained when the number of InGaN well layers
is two if the emission wavelength is shorter than 427 nm and one if
the emission wavelength is longer than 427 nm, which are in good
agreement with the results observed by Nakamura et al. in their
experiments. |
| 關聯: | IEEE Journal of Quantum Electronics, 40(5): 437-444 |
| 顯示於類別: | [物理學系] 期刊論文
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