資料載入中.....
|
請使用永久網址來引用或連結此文件:
http://ir.ncue.edu.tw/ir/handle/987654321/12460
|
| 題名: | Effect of Band-offset Ratio on Characteristics of 405-nm InGaN Quantum-well Lasers
導電帶與價電帶井深比例對405-nm氮化銦鎵量子井雷射特性之影響 |
| 作者: | Liou, Bo-Ting;Kuo, Yen-Kuang;Yen, Sheng-Horng;Lin, Cheng-Yang |
| 貢獻者: | 物理學系 |
| 關鍵詞: | InGaN;Band-Offset ratio;Quantum-well laser;Threshold current
氮化銦鎵;導電帶與價電帶井深比例;量子井雷射;臨界電流 |
| 日期: | 2004-09
|
| 上傳時間: | 2012-07-19T01:47:02Z
|
| 出版者: | 修平技術學院 |
| 摘要: | The effect of band-offset ratio on the characteristics of the 405-nm InGaN quantum-well lasers is studied numerically. Specifically, the optical properties are investigated when the band-offset ratio of the InxGa1-xN/InyGa1-yN heterojunction is 7/3. Compared to a band-off-set ratio of 3/7, which was widely accepted before the year 2002, the laser performance is better and the distribution of carrier concentration in the quantum wells becomes more uniform when the band-offset ratio is 7/3, which is accepted by most researchers recently. Several formulae are derived from simulations, which can be used as a handy tool to calculate the thickness of InxGa1-xN well layer in the 405-nm laser structure for specific indium compositions of InxGa1-xN well alyer and InyGa1-yN barrier layer.
本文以數值計算來探討導電帶與價電帶井深比例對405-nm氮化銦嫁量子井雷射特性的影響。特別是導電帶與價電帶井深比例為7/3的Inx, Ga1-xN/InyGa1-yN異質結構的光學特性。比較顯示現今大家所認同的井深比例為7/3比2002年以前一般所認同的井深比例為3/7有較佳的雷射效能及在量子井有較均勻的載子濃度分布。本文亦由模擬的結果推導出405nm雷射結構在一些特定銦含量的披覆層時，其量子井厚度與量子井銦含量的關係式，以作為設計的參考。 |
| 關聯: | 修平學報, 9: 53-67 |
| 顯示於類別: | [物理學系] 期刊論文
|
文件中的檔案:
| 檔案 |
大小 | 格式 | 瀏覽次數 |
|---|
| 2020200610091.pdf | 48Kb | Adobe PDF | 565 | 檢視/開啟 |
|
在NCUEIR中所有的資料項目都受到原著作權保護.
|
