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题名: Effect of Band-offset Ratio on Characteristics of 405-nm InGaN Quantum-well Lasers
導電帶與價電帶井深比例對405-nm氮化銦鎵量子井雷射特性之影響
作者: Liou, Bo-Ting;Kuo, Yen-Kuang;Yen, Sheng-Horng;Lin, Cheng-Yang
贡献者: 物理學系
关键词: InGaN;Band-Offset ratio;Quantum-well laser;Threshold current
氮化銦鎵;導電帶與價電帶井深比例;量子井雷射;臨界電流
日期: 2004-09
上传时间: 2012-07-19T01:47:02Z
出版者: 修平技術學院
摘要: The effect of band-offset ratio on the characteristics of the 405-nm InGaN quantum-well lasers is studied numerically. Specifically, the optical properties are investigated when the band-offset ratio of the InxGa1-xN/InyGa1-yN heterojunction is 7/3. Compared to a band-off-set ratio of 3/7, which was widely accepted before the year 2002, the laser performance is better and the distribution of carrier concentration in the quantum wells becomes more uniform when the band-offset ratio is 7/3, which is accepted by most researchers recently. Several formulae are derived from simulations, which can be used as a handy tool to calculate the thickness of InxGa1-xN well layer in the 405-nm laser structure for specific indium compositions of InxGa1-xN well alyer and InyGa1-yN barrier layer.
本文以數值計算來探討導電帶與價電帶井深比例對405-nm氮化銦嫁量子井雷射特性的影響。特別是導電帶與價電帶井深比例為7/3的Inx, Ga1-xN/InyGa1-yN異質結構的光學特性。比較顯示現今大家所認同的井深比例為7/3比2002年以前一般所認同的井深比例為3/7有較佳的雷射效能及在量子井有較均勻的載子濃度分布。本文亦由模擬的結果推導出405nm雷射結構在一些特定銦含量的披覆層時,其量子井厚度與量子井銦含量的關係式,以作為設計的參考。
關聯: 修平學報, 9: 53-67
显示于类别:[物理學系] 期刊論文

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