English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6487/11649
Visitors : 28682493      Online Users : 135
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12462

Title: Improving High-temperature Performance in Continuous-wave mode InGaAsN/GaAsN Ridge Waveguide Lasers
Authors: Chang, Yi-An;Kuo, Hao-Chung;Lu, Chun-Yi;Kuo, Yen-Kuang;Wang, Shing-Chung
Contributors: 物理學系
Date: 2005-04
Issue Date: 2012-07-19T01:47:14Z
Publisher: IOP Publishing
Abstract: Continuous-wave (CW) mode operation InGaAsN/GaAsN double-quantum-well lasers with a laser wavelength of 1.295 µm are demonstrated by metal-organic chemical vapour deposition (MOCVD). With the use of a high-bandgap GaAs0.9P0.1 into the active region before the growth of p-type layers, a room temperature (RT) threshold current of 99 mA and the characteristic temperature (T0) values of 155 K in a temperature range of 25–95 °C and 179 K in a temperature range of 25–85 °C are obtained from a 4 × 1000 µm2 ridge waveguide uncoated laser diode. The T0 value of the conventional structure without the high-bandgap GaAs0.9P0.1 is 118 K in a temperature range of 25–95 °C. High-temperature performance is improved and the results of numerical analysis suggest that it may be attributed to the reduced electronic leakage current.
Relation: Semiconductor Science and Technology, 20(6): 601-605
Appears in Collections:[物理學系] 期刊論文

Files in This Item:

File SizeFormat

All items in NCUEIR are protected by copyright, with all rights reserved.


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback