National Changhua University of Education Institutional Repository : Item 987654321/12464
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题名: Temperature-dependent Optical Properties of InGaN Semiconductor Materials: Experimental and Numerical Studies
作者: Kuo, Yen-Kuang;Horng, Kuo-Kai;Huang, Ya-Lien;Chang, Jih-Yuan;Chang, Yuni;Huang, Hsu-Ching
贡献者: 物理學系
关键词: InGaN;Quantum well;Photoluminescence;Numerical simulation
日期: 2000-07
上传时间: 2012-07-19T01:47:16Z
出版者: SPIE--The International Society for Optical Engineering
摘要: The InGaN semiconductor materials have important applications in short-wavelength light emitting diodes and semiconductor lasers. In this work, we study the optical properties of a single quantum well and a multiple quantum well InGaN devices experimentally with a photoluminescence measurement system and numerically wiht a commercial Lastip simulation program. Important optical parameters such as the peak wavelength, the emission intensity, and the bandwidth of the photoluminescence spectra at various temperatures and pump power levels are characterized and compared to the results obtained from the Lastip numerical simulation. The effects of the indium concentration in quantum well, the well width, and the bowing parameter on the optical properties of the InGaN quantum well structures are also studied numerically with the Lastip simulation program. Good agreement between the experimental and numerical results is observed.
關聯: Proceedings of SPIE, 4078: 579-586
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