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題名: A Numerical Study of Dc Characteristics of HEMT with p-type δ-doped Barrier
作者: Chang, Y.;Kuo, Yen-Kuang
貢獻者: 物理學系
日期: 2005-09
上傳時間: 2012-07-19T01:47:20Z
出版者: SpringerLink
摘要: The dc characteristics of an InGaP/InGaAs/GaAs
pseudomorphic high-electron-mobility transistor (HEMT) with
a p-type δ-doped InGaP barrier are numerically investigated
with the ISE-TCAD simulation program. The simulation results
indicate that a HEMT with such a structure has a higher gate
turn-on voltage, better carrier confinement that results in a lower
voltage-dependent transconductance, and a larger breakdown
voltage when compared with the typical HEMT. The simulation
results also suggest that this structure is beneficial for linear and
large-signal application.
關聯: Applied Physics A: Materials Science & Processing, 81(4): 877-879
顯示於類別:[物理學系] 期刊論文

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