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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12467

Title: A Numerical Study of Dc Characteristics of HEMT with p-type δ-doped Barrier
Authors: Chang, Y.;Kuo, Yen-Kuang
Contributors: 物理學系
Date: 2005-09
Issue Date: 2012-07-19T01:47:20Z
Publisher: SpringerLink
Abstract: The dc characteristics of an InGaP/InGaAs/GaAs
pseudomorphic high-electron-mobility transistor (HEMT) with
a p-type δ-doped InGaP barrier are numerically investigated
with the ISE-TCAD simulation program. The simulation results
indicate that a HEMT with such a structure has a higher gate
turn-on voltage, better carrier confinement that results in a lower
voltage-dependent transconductance, and a larger breakdown
voltage when compared with the typical HEMT. The simulation
results also suggest that this structure is beneficial for linear and
large-signal application.
Relation: Applied Physics A: Materials Science & Processing, 81(4): 877-879
Appears in Collections:[物理學系] 期刊論文

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