National Changhua University of Education Institutional Repository : Item 987654321/12467

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NCUEIR > College of Science > Department of Physics > Periodical Articles > Item 987654321/12467

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12467

Title:	A Numerical Study of Dc Characteristics of HEMT with p-type δ-doped Barrier
Authors:	Chang, Y.;Kuo, Yen-Kuang
Contributors:	物理學系
Date:	2005-09
Issue Date:	2012-07-19T01:47:20Z
Publisher:	SpringerLink
Abstract:	The dc characteristics of an InGaP/InGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) with a p-type δ-doped InGaP barrier are numerically investigated with the ISE-TCAD simulation program. The simulation results indicate that a HEMT with such a structure has a higher gate turn-on voltage, better carrier confinement that results in a lower voltage-dependent transconductance, and a larger breakdown voltage when compared with the typical HEMT. The simulation results also suggest that this structure is beneficial for linear and large-signal application.
Relation:	Applied Physics A: Materials Science & Processing, 81(4): 877-879
Appears in Collections:	[Department of Physics] Periodical Articles

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