English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6487/11649
Visitors : 28590484      Online Users : 287
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12470

Title: Simulation of InGaN Quantum Well Laser Performance Using Quaternary InAlGaN Alloy as Electronic Blocking Layer
Authors: Chan, Yi-An;Luo, Chuan-Yu;Kuo, Hao-Chung;Kuo, Yen-Kuang;Lin, Chia-Feng;Wang, Shing-Chung
Contributors: 物理學系
Keywords: InGaN;Blocking layer;Quaternary;Leakage current;Characteristic temperature
Date: 2005-11
Issue Date: 2012-07-19T01:47:22Z
Publisher: Japan Science and Technology Agency
Abstract: Laser performance of an InGaN edge-emitting laser using a quaternary InAlGaN electronic blocking layer is investigated. Varying the aluminum (Al) composition in InAlGaN with a fixed indium (In) value (Al:In=5:1) indicates that a lower threshold current and higher characteristic temperature (T0) value can be obtained when the Al composition is higher than 20%. When Al=25%, the threshold current is reduced at the expense of a decreased T0 value from 149 to 130 K when the In composition increases from 1 to 7% in a temperature range of 300-370 K. The decreased T0 value is mainly attributed to the increase in electronic leakage current.
Relation: Japanese Journal of Applied Physics, 44(11): 7916-7918
Appears in Collections:[物理學系] 期刊論文

Files in This Item:

File SizeFormat

All items in NCUEIR are protected by copyright, with all rights reserved.


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback