National Changhua University of Education Institutional Repository : Item 987654321/12470
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题名: Simulation of InGaN Quantum Well Laser Performance Using Quaternary InAlGaN Alloy as Electronic Blocking Layer
作者: Chan, Yi-An;Luo, Chuan-Yu;Kuo, Hao-Chung;Kuo, Yen-Kuang;Lin, Chia-Feng;Wang, Shing-Chung
贡献者: 物理學系
关键词: InGaN;Blocking layer;Quaternary;Leakage current;Characteristic temperature
日期: 2005-11
上传时间: 2012-07-19T01:47:22Z
出版者: Japan Science and Technology Agency
摘要: Laser performance of an InGaN edge-emitting laser using a quaternary InAlGaN electronic blocking layer is investigated. Varying the aluminum (Al) composition in InAlGaN with a fixed indium (In) value (Al:In=5:1) indicates that a lower threshold current and higher characteristic temperature (T0) value can be obtained when the Al composition is higher than 20%. When Al=25%, the threshold current is reduced at the expense of a decreased T0 value from 149 to 130 K when the In composition increases from 1 to 7% in a temperature range of 300-370 K. The decreased T0 value is mainly attributed to the increase in electronic leakage current.
關聯: Japanese Journal of Applied Physics, 44(11): 7916-7918
显示于类别:[物理學系] 期刊論文

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