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Please use this identifier to cite or link to this item:
http://ir.ncue.edu.tw/ir/handle/987654321/12474
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| Title: | Optimization of Active Layer Structures to Minimize Leakage Current for An AlGaInP Laser Diode |
| Authors: | Huang, M. F.;Tsai, M. L.;Shin, J. Y.;Sun, Y. L.;Yang, R. M.;Kuo, Yen-Kuang |
| Contributors: | 物理學系 |
| Date: | 2005-11
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| Issue Date: | 2012-07-19T01:47:26Z
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| Publisher: | SpringerLink |
| Abstract: | Theoretical analysis for different active layer structures
under the same waveguide confinement is conducted to
minimize the electron overflow from the active layer to the
p-cladding layer for the AlGaInP laser diode. An active layer
with five quantum wells and a (AlxGa1−x)InP barrier with an x
composition of 0.5 has found to be the optimal structure for the
AlGaInP laser diode suitable for DVD-ROM and DVD player.
Experimental results have confirmed that the characteristic temperature
can be as high as 110 K at far field angles of 29◦/9◦ for
this optimized AlGaInP laser diode. |
| Relation: | Applied Physics A: Materials Science & Processing, 81(7): 1369-1373 |
| Appears in Collections: | [物理學系] 期刊論文
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