Optical character istics of the yellowish green InGaAlP semiconductor laser with an n-type well is numer ically studied with a commercial LASTIP simulation program. The result shows that an appropr iate n-type well can reduce the laser threshold current without an increase of the electr ic resistance and a change of the laser wavelength. The improvement in threshold current with an n-type well is in the range of 24% to 34% for a temperature r ange from 100 to 400 K when compared to the conventional laser diode.
關聯:
in the 2nd International Photonics Conference (IPC2000, National Chiao Tung University, Hsinchu, Taiwan), paper TH-S1-P003, Proc. IPC 2000: 494-496
