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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12475

Title: Optical Characteristics of Yellowish Green InGaAlP Quantum Well Structure with an N-type Well
Authors: Chang, Yuni;Huang, Hsu-Ching;Kuo, Yen-Kuang
Contributors: 物理學系
Keywords: InGaAlP;n-type well;Yellow-green LED;Numer ical simulation
Date: 2000
Issue Date: 2012-07-19T01:47:26Z
Abstract: Optical character istics of the yellowish green
InGaAlP semiconductor laser with an n-type well is numer ically
studied with a commercial LASTIP simulation program. The
result shows that an appropr iate n-type well can reduce the laser
threshold current without an increase of the electr ic resistance
and a change of the laser wavelength. The improvement in
threshold current with an n-type well is in the range of 24% to
34% for a temperature r ange from 100 to 400 K when compared
to the conventional laser diode.
Relation: in the 2nd International Photonics Conference (IPC2000, National Chiao Tung University, Hsinchu, Taiwan), paper TH-S1-P003, Proc. IPC 2000: 494-496
Appears in Collections:[物理學系] 會議論文

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